Impurity level

New method of calculating the probability function of carriers occupying the impurity level

一种计算载流子占据杂质能级的概率的新方法

It is believed that the emission peaks were concerned with impurity level in the bandgap .

变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。

Study of transport behavior of electrons localized in shallow impurity level

局域在浅施主能级上的电子输运行为研究

The Theory of Deep Impurity Level in Semiconductors ( Overview )

半导体中深能级杂质的理论（综述）

Meanwhile , the plasma jet length is decreased exponentially as the air impurity level increases .

等离子体射流的长度随着空气含量的增加不断减小。

These data might be useful to estimate the lifetime of plasma facing components and to analyze the impurity level in core plasma of fusion reactors .

这些结果对估计面对等离子体的部件寿命和分析聚变堆堆芯等离子体中的杂质水平估计是很有用的。

An identification technique was presented for estimating the impurity level in propellant and the properties of exhaust afterburning , which can not be measured simply by experiment .

提出用参数辨识确定推进剂中钾、钠杂质含量以及后燃对喷焰微波衰减影响程度的方法。

The surface morphology , growth rate , residual impurity level , electronic mobility deep impurity level and carrier concentration profile for low temperature epitaxy are discussed and compared with those for high temperature epitaxy .

对低温外延时的表面形貌，生长速率，剩余杂质浓度，电子迁移率，深能级杂质和纵向浓度分布进行了讨论，并与高温外延进行了比较。

The calculated results agree well with the experimental data . The impurity level calculation formula which established based on electronegativity can be used to provide theoretical guidance in the search of proper impurity atoms for semiconductor doping .

计算结果与实验值符合得较好，这一基于电负性的杂质能级计算公式可以为寻找合适的杂质用于半导体掺杂提供理论上的指导。

During the transition , electrons in valence band firstly transfer to the impurity level in the low energy range and then to the conduction band , inducing longer wavelength of absorbed photon , redshift of the optical absorption edge , and smaller energy band gap .

价带中的电子发生跃迁时，首先会跃迁到能量相对较低的杂质能级，然后再跃迁到导带，导致吸收光子的波长变长，吸收边红移，光学带隙变小。

The probability functions of carriers occupying the impurity level are calculated by applying the Fermi-Dirac distribution function and the thermal-equilibrium theory of the impurity ionization , the result accord with that obtained by applying the conventional thermodynamic and statistical theory and the method of computing the chemical potential .

利用费米分布函数和杂质电离的热平衡理论计算了载流子在杂质能级上的占据概率，其结果与传统的热力学统计理论及计算化学势方法得到的结果完全一致。

Trapping characteristics of the shallow impurity energy level in silicon at low temperatures

硅浅杂质能级的低温陷阱效应

Impurity Energy Level of Nitride Parabolic Quantum Wells with Magnetic Filed

在磁场作用下氮化物抛物量子阱中杂质态能量

Based on the consideration of this device , the paper calculates and discusses the shallow impurity energy level and optical absorption and presents : the impurity band ;

本文结合这种器件计算和讨论了超晶格中浅杂质能谱和光吸收，给出了：杂质能带；

The other absorption peak is attributed to the transition of bound electrons at the impurity energy level of the BaO semiconductor matrix , and the presence of such an impurity energy level is related to the negative ion vacancies caused by the excess barium in the BaO crystal .

而位于近红外光区的次吸收峰则是由BaO半导体基质中杂质能级的光吸收引起的。杂质能级的产生与超额Ba在BaO晶体中造成的氧缺位有关。

For example , if it is required to detect an impurity at the level of0.1 % , it should be demonstrated that the procedure will reliably detect the impurity at that level .

例如，如果必需检测浓度在0.1%的杂质，则应当证明该分析规程将可靠地检测在这个水平的杂质。

It has been found that a bound state of excitation exists around a paramagnetic impurity with its energy level in the energy gap .

证明在磁性杂质附近，可能形成一个束缚态的元激发，其能量位于能隙之中。